Surface Cleaning and Modification of Oxide Films by Atomic Hydrogen Annealing

To suppress degradation of the electrical property field-effect transistors, removal C contamination without damaging oxide films is important in semiconductor industry. In addition, to reduce bonding failure, it necessary remove native from metal films. achieve this, atomic hydrogen was generated by decomposition H2 gas on a heated tungsten mesh. This surface treatment referred as annealing (AHA). The reaction with various films, such AlOx, TiOx, CrOx, NiOx, CuOx, and SiOx, investigated. O concentrations Al, Ti, Cr slightly decreased AHA. thermal prepared at 400 ℃ were not changed AHA, except for CuOx. reduction reactivity film due depends metal–oxygen bond strength. although Si substrate 1000 etched, AHA resulted etching Si-rich SiOx. These findings are useful controlling properties